vishay semiconductors vlmk/y82.. document number 81871 rev. 1.0, 03-jul-08 www.vishay.com 1 power smd led clcc-2 flat features ? utilizing alingap technology ? very low thermal resistance ? optical efficiency 40 lm/w at 100 ma ? luminous intensity and color grouping ? luminous intensity ratio per package unit i vmax. /i vmin. 1.6 ? esd-withstand voltage: up to 2 kv according to jesd22-a114-b ? compatible with ir-reflow solder processes according to cecc 00802 and j-std-020c ? lead (pb)-free device ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec ? preconditioning: a cc. to jedec level 4 ? automotive qualified aec-q101 ? very flat package (0.75 mm) 21214 e4 description the vlmk/y82.. is one of the most robust and light efficient leds in the market. its ceramic package makes it the ideal light source in applications of high thermal considerations allowing the additional current drive for a maximum light ou tput while maintaining a high service life of up to 50k h. product group and package data ? product group: led ? package: smd clcc-2 flat ? product series: power ? angle of half intensity: 60 applications ? backlighting (lcds, switches, keys, illuminated ad vertising) ? exterior automotive lighting: (brake lights, turn lights, backlighting) ? signal and symbol luminaire ? marker lights ? traffic lights ? side markers parts table part color, luminous intensity (at i f = 400 ma) luminous flux (typ) technology VLMK82eafa-gs08 amber, i v = (7100 to 14 000) mcd 28 000 mlm aiingap VLMK82eafa-gs18 amber, i v = (7100 to 14 000) mcd 28 000 mlm aiingap vlmy82dbeb-gs08 ye l l o w, i v = (5600 to 11 200) mcd 26 000 mlm aiingap vlmy82dbeb-gs18 ye l l o w, i v = (5600 to 11 200) mcd 26 000 mlm aiingap
www.vishay.com 2 document number 81871 rev. 1.0, 03-jul-08 vishay semiconductors vlmk/y82.. note: not designed for reverse operation 1) t amb = 25 c, unless otherwise specified note: 1) t amb = 25 c, unless otherwise specified 2) forward voltages are tested at a current pulse duration of 1 ms and a tolerance of 0.1 v note: 1) t amb = 25 c, unless otherwise specified 2) forward voltages are tested at a current pulse duration of 1 ms and a tolerance of 0.1 v absolute maximum ratings 1) VLMK82../vlmy82.. parameter test condition symbol value unit forward current i f 400 ma power dissipation p tot 1360 mw junction temperature t j + 115 c surge current t < 10 s, d = 0.1 i fm 1000 ma operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c thermal resistance junction/pin metal core pcb 960 mm2 per led r thjp 20 k/w optical and electrical characteristics 1) vlmy82dbeb, yellow parameter test condition symbol min. typ. max. unit luminous intensity i f = 400 ma i v 5600 8300 11 200 mcd luminous flux calculated i f = 400 ma v 17 500 26 000 35 200 mlm dominant wavelength i f = 400 ma d 583 590 595 nm peak wavelength i f = 400 ma p 594 nm spectral bandwidth at 50 % i rel max. i f = 400 ma ? 20 nm angle of half intensity i f = 400 ma ? 60 deg forward voltage 2) i f = 400 ma v f 1.9 2.5 3.4 v optical efficiency i f = 400 ma opt 26 im/w temperature coefficient of v f i f = 400 ma tc vf - 2.2 mv/k temperature coefficient of d i f = 400 ma tc d 0.1 nm/k optical and electrical characteristics 1) VLMK82eafa, amber parameter test condition symbol min. typ. max. unit luminous intensity i f = 400 ma i v 7100 8900 14 000 mcd luminous flux calculated i f = 400 ma v 22 300 28 000 44 000 mlm dominant wavelength i f = 400 ma d 612 617 624 nm peak wavelength i f = 400 ma p 623 nm spectral bandwidth at 50 % i rel max. i f = 400 ma ? 18 nm angle of half intensity i f = 400 ma ? 60 deg forward voltage 2) i f = 400 ma v f 1.9 2.5 3.4 v optical efficiency i f = 400 ma opt 28 im/w temperature coefficient of v f i f = 400 ma tc vf - 1.8 mv/k temperature coefficient of d i f = 400 ma tc d 0.06 nm/k
document number 81871 rev. 1.0, 03-jul-08 www.vishay.com 3 vishay semiconductors vlmk/y82.. note: luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of 11 %. the above type numbers represent the order groups which include only a few brightne ss groups. only one group will be shipped on each reel (there will be no mixing of two groups on each reel). in order to ensure avail ability, single brightness gr oups will not be orderable. in a similar manner for colors where wavelength groups are m easured and binned, each single wave length group is packed in a sin gle reel. in order to ensure avail ability, single wavelength groups can not be ordered. note: wavelengths are tested at a current pulse durat ion of 25 ms and an accuracy of 1 nm. note: forward voltages are tested at a current pulse duration of 1 ms and a tolerance of 0.1 v luminous intensity/flux cl assification yellow/amber group luminous intensity iv (mcd) standard min. max. db 5600 7100 ea 7100 9000 eb 9000 11 200 fa 11 200 14 000 color classification group dom. wavelength (nm) yellow amber min. max. min. max. 2 612 616 3 583 586 616 620 4 586 589 620 624 5 589 592 6 592 595 forward voltage classification group forward voltage (v) min. max. 01 1.9 2.2 02 2.2 2.5 03 2.5 2.8 04 2.8 3.1 05 3.1 3.4
www.vishay.com 4 document number 81871 rev. 1.0, 03-jul-08 vishay semiconductors vlmk/y82.. typical characteristics t amb = 25 c, unless otherwise specified figure 1. forward current vs . solder point temperature figure 2. relative luminous intensity vs. angular displacement figure 3. relative intensity vs. wavelength 0 50 100 150 200 250 300 350 400 450 010203040506070 8 090100110 t sp - solder point temperat u re (c) i f - for w ard c u rrent (ma) 20962 0.4 0.2 0 95 10319 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 i v rel - relati v e l u mino u s intensity ? - ang u lar displacement 0 0.2 0.4 0.6 0. 8 1.0 1.2 500 525 550 575 600 625 650 675 700 - w a v elength (nm) i rel - relati v e intensity 2121 8 yello w am b er figure 4. forward current vs. forward voltage figure 5. relative luminous intensity vs. forward current figure 6. change of dominant wavelength vs. forward current 0 100 200 300 400 500 600 1.5 2 2.5 3 v f - for w ard v oltage ( v ) i f - for w ard c u rrent (ma) 21399 am b er yello w 0 0.2 0.4 0.6 0. 8 1.0 1.2 0 100 200 300 400 500 600 i f - for w ard c u rrent (ma) i v rel - relati v e l u mino u s intensity 21400 yello w am b er - 3.0 - 2.5 - 2.0 - 1.5 - 1.0 - 0.5 0 0.5 1.0 0 100 200 300 400 500 600 i f - for w ard c u rrent (ma) ? d - change of dom. w a v elength (nm) 21401 yello w am b er
document number 81871 rev. 1.0, 03-jul-08 www.vishay.com 5 vishay semiconductors vlmk/y82.. figure 7. change of forward voltage vs. ambient temperature figure 8. relative luminous intensity vs. ambient temperature figure 9. change of dominant wavelength vs. ambient temperature - 250 - 200 - 150 - 100 - 50 0 50 100 150 200 250 - 50 - 25 0 25 50 75 100 125 t am b - am b ient temperat u re (c) v f - change of for w ard v oltage (m v ) 21220 am b er yello w 0 0.5 1.0 1,5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 t am b - am b ient temperat u re (c) i v rel - relati v e l u mino u s intensity 21402 yello w am b er - 10 - 8 - 6 - 4 - 2 0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 125 t am b - am b ient temperat u re (c) ? d - change of dom. w a v elength (nm) 21222 yello w am b er
www.vishay.com 6 document number 81871 rev. 1.0, 03-jul-08 vishay semiconductors vlmk/y82.. taping dimensions in millimeters 20 8 69
document number 81871 rev. 1.0, 03-jul-08 www.vishay.com 7 vishay semiconductors vlmk/y82.. package dimensions in millimeters soldering profile (1.05) 4x 2.1 2x 2.7 2x 6x (0.2) 0.1 0.75 0.1 8 (3.4) (3.3) ( 2.1) 1.55 0.15 6x (metallized) (0.15) (r 0.25) a c p2 p1 a c (0.5) 0.45 i n dex mark (plati n g optio n ) specifications according to di n technical dra w ings n ot indicated tolerances 0.2 dra w ing- n o.: 6.5 8 1-5010.01-4 iss u e: 2; 02.07.0 8 solering pads dimensions 0.4 0. 8 2.2 2.7 21223 figure 10. vishay lead (pb)-free reflow soldering profile (acc. to j-std-020c) 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperat u re (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp u p 3 c/s max. ramp do w n 6 c/s 20619 ir reflo w soldering profile for lead (p b )-free soldering preconditioning acc. to jedec le v el 4 max. 2 cycles allo w ed 255 c
www.vishay.com 8 document number 81871 rev. 1.0, 03-jul-08 vishay semiconductors vlmk/y82.. bar code-product-label example: a) type of component b) manufacturing plant c) sel - selection code (bin): e.g.: da = code for luminous intensity group 5 = code for color group 4 = code for forward voltage d) batch: 200707 = year 2007, week 07 ph19 = plant code e) total quantity dry packing the reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage. final packing the sealed reel is packed into a cardboard box. a secondary cardboard box is used for shipping purposes. recommended method of storage dry box storage is recommended as soon as the aluminum bag has been opened to prevent moisture absorption. the following conditions should be observed, if dry boxes are not available: ? storage temperature 10 c to 30 c ? storage humidity 60 % rh max. after more than 72 h under these conditions moisture content will be too high for reflow soldering. in case of moistu re absorption, the devices will recover to the former condition by drying under the following condition: 192 h at 40 c + 5 c/- 0 c and < 5 % rh (dry air/nitrogen) or 96 h at 60 c + 5 c and < 5 % rh for all device containers or 24 h at 100 c + 5 c not suitable for reel or tubes. an eia jedec standard j esd22-a112 level 4 label is included on all aluminium dry bags. example of jesd22-a112 level 4 label esd precaution proper storage and handling procedures should be followed to prevent esd damage to the devices especially when they are removed from the antistatic shielding bag. electro-static sensitive devices warning labels are on the packaging. vishay semiconductors standard bar code labels the vishay semiconductors standard bar code labels are printed at final packing areas. the labels are on each packing unit and contain vishay semiconductors specific data. a c b d e 20613 al u min u m b ag la b el reel 15973 caution this b ag contains moisture-sensitive devices 1. shelf life in sealed b ag: 12 months at < 40 c and < 90 % relati v e h u midity (rh) 2. after this b ag is opened, de v ices that w ill b e s ub jected to soldering reflo w or e qu i v alent processing (peak package b ody temp. 260 c) m u st b e 2a. mo u nted w ithin 72 ho u rs at factory condition of < 30 c/60 % rh or 2 b . stored at < 5 % rh 3. de v ices re qu ire b aking b efor mo u nting if: h u midity indicator card is > 10 % w hen read at 23 c 5 c or 2a. or 2 b . are not met. 4. if b aking is re qu ired, de v ices may b e b aked for: 192 ho u rs at 40 c + 5 c/- 0 c and < 5 % rh (dry air/nitrogen) or 96 ho u rs at 60 c 5 c and < 5 % rh for all de v ice containers or 24 ho u rs at 125 c 5 c not s u ita b le for reels or t ub es bag seal date: (if b lank, see b arcode la b el) note: level and body temperature defined by eia jedec standard jstd-020 4 level
vishay semiconductors vlmk/y82.. document number 81871 rev. 1.0, 03-jul-08 www.vishay.com 9 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into t he atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its polic y of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semico nductors are not manufactured with ozone depleting substances and do not contain such substances. the iec/en standards require that the desired classifica tion accessible emission limit shall not be exceeded in ?normal? and ?single fault conditions?. this product is in compliance with the requirement in cen/iec/en60825-1 to ensure that required classifica tions are not exceeded in single fault conditions. we reserve the right to make c hanges to improve technical design and may do so without further notice. parameters can vary in different applications. all operat ing parameters must be validated for each customer application by the customer. should the buyer use vish ay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or i ndirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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